Technology

Improved LED Emission

Innovation Semiconductor’s vertical LED-FET architecture creates brilliant, bright images with incredible resolution and uniform colors across the entire LED array.
A graph showing that Periodic Nanoscale LEDs emit more directional light emission compared to Planar LEDs. Next to the graph is an illustration showing Innovation Semiconductor's "gate-all-around" approach that reduces or eliminates sidewall emission and focuses light emission upward. The wall surrounds the layers (listed from the top) p-GaN, InGaN MQW (glowing blue), n-GaN, p-GaN, n-GaN and sits on top of—but does not cover—a layer of n-GaN stacked on top of a layer of aluminum oxide.
Our proprietary technology offers breakthroughs no other company can deliver.
Diamond
Single-crystal gallium nitride (GaN) material system for LEDs and driver transistors enables higher, more consistent brightness
Stacked flat planes
Vertical LED-FET integration increases resolution potential with demonstrated LED diameters down to 2 µm, and subpixel pitch down to 4 µm
Headlight
Periodic microscale and nanoscale emitters show more directional (on-axis) light emission
Circuits
GaN transistors produce significantly higher LED switching rates
Square with dotted line around it
“Gate-all-around” approach reduces or eliminates sidewall emission
Square with slash through it
No separate backplane layer required

Have questions?

Contact us to learn more about Innovation Semiconductor’s new approach to LED emission for the next generation of Augmented Reality (AR) and display technologies.
Contact Us
->
Privacy Policy
©2023 Innovation Semiconductor
By clicking “Accept”, you agree to the storing of cookies on your device to enhance site navigation, analyze site usage, and assist in our marketing efforts. View our Privacy Policy for more information.
DenyAccept